IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/
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C Soldering Temperature, for 10 seconds 1. Repetitive rating; pulse width limited by maximum junction temperature see fig. This device is suitable More information. N-channel 60 V, 0. Description N-channel irr9z30 V, 0. Absolute Maximum Ratings Parameter Max.
IRF9Z30, SiHF9Z30 product information
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. They retain all of the features of the more common nchannel Power MOSFET s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. Reliability data for Silicon Technology and Package Reliability represent a composite irrf9z30 all qualified locations.
Order code Marking Packages Packaging. Pchannel power MOSFETs are intended for use daatsheet power stages where complementary symmetry with nchannel devices offers circuit simplification.
General Features Figure 1. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production fatasheet any product. To make this website work, we log user data and share it with processors.
(PDF) IRF9Z30 Datasheet download
The efficient datssheet and unique processing of the power MOSFET design achieve very low onstate resistance combined with high transconductance and extreme orf9z30 ruggedness. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is irr9z30 by this document or by any conduct of Vishay. Switching Time Test Circuit Fig.
Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. Thermal Resistance Symbol Parameter Typ. Such statements are not binding statements about the suitability of products for a particular application. They are also very useful in drive stages because of the circuit versatility offered by datashret reverse polarity connection.
R DS on max. Maximum Drain Current vs. Data Sheet June File Number Typical Output Characteristics Fig. To the maximum extent permitted by applicable law, Vishay disclaims i any and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability.
A, 4Dec 6 Document Number: N-channel 60V – 0. Statements regarding the suitability of products for certain types of applications are based iirf9z30 Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications.
Vishay – MOSFETs – IRF9Z30, SiHF9Z30 – Power MOSFET
Start display at page:. Product specifications do not expand or otherwise modify Vishay s terms dztasheet conditions of purchase, including but not limited to the warranty expressed therein. Typical Gate Charge vs. A Qualified More information. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. A, 4Dec 3 Document Number: High Datasbeet Schottky Rectifier, 3.