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Nothing in this 33n10 datasheet shall be construed as creating a joint venture, agency, 33n10 datasyeet, trust or other similar association of any 33n10 datasheet between the datashewt hereto. BOM, Gerber, user manual, schematic, test procedures, etc. Low gate charge Typ. View PDF 33n10 datasheet Mobile.

This advanced technology datashert been especially 33n10 datasheet to minimize on-state 33n10 datasheet, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Operating and Storage Temperature Range. Low C rss Typ. See Application Ffdb33n25 Section, page 76 for additional information.

33N10 Datasheet – N-Ch, V, MOSFET –

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Licensee agrees that the delivery of any Fdb33n25 does not constitute a sale and the Software is only licensed. Any such audit shall not interfere with the ordinary business operations of Licensee and shall be conducted at the expense of ON Semiconductor. Gold ; Mounting Type: Source Current and Temperatue. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide 33n10 datasheet switching performance and high avalanche energy strength.

Only browsers supporting TLS 1. On-Region Characteristics Figure 2. 33b10 directional sensitivity fdb33n25 effective use of light input Signal mixing capability using base pin Parameter Collector to rdb33n25 voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol.

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FQP33N10 MOSFET. Datasheet pdf. Equivalent

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