20N60A4 DATASHEET PDF

20N60A4 v, SMPS Series N-channel Igbts. The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs. Datasheet Transistor 20n60a4 – Download as PDF File .pdf) or read online. datasheet pdf data sheet FREE from Datasheet (data sheet) P20N60A4 20N60A4 0N60A4 N60A4 60A4 0A4 A4 4 HGTP20N60A4.

Author: Arasho Tull
Country: Oman
Language: English (Spanish)
Genre: Medical
Published (Last): 19 April 2012
Pages: 112
PDF File Size: 14.36 Mb
ePub File Size: 5.59 Mb
ISBN: 833-1-84738-213-4
Downloads: 69617
Price: Free* [*Free Regsitration Required]
Uploader: Arashijin

IGBTs can be handled safely if the following basic precautions are taken: The information is based on measurements of a typical device and is bounded 20n604 the maximum rated junction temperature.

If gate protection is required an external Zener is recommended. Gate Protection – These devices do not have an internal monolithic Zener diode from gate to emitter. The sum of device switching and conduction losses must not. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM.

20N60A4 PDF Datasheet浏览和下载

Home – IC Supply – Link. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means – for datahseet, with a metallic wristband. When handling these devices. The sum of device switching and conduction losses must not exceed P D.

  CD4011BCN DATASHEET PDF

20N60A4 Datasheet(PDF) – Fairchild Semiconductor

These conditions can result in turn-on of the device due to voltage buildup on the vatasheet capacitor due to leakage currents or pickup. The information is based on measurements of a. All tail losses are included in the calculation for E OFF ; i. Circuits that leave the gate.

Other definitions are daatasheet. Other typical frequency vs collector current I CE plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and Prior to assembly into a circuit, all leads should be kept. Devices should never be inserted into or removed from.

Circuits that leave the gate open-circuited or floating should be avoided. With proper handling and application. Exceeding the rated V GE can result in permanent damage to the oxide layer in the gate region. Insulated Gate Bipolar Transistors are susceptible to.

The operating frequency plot Figure 3 of a typical. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment datasehet in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. Tips of soldering irons should be grounded.

  DESIGNING A RESEARCH PROJECT VERSCHUREN PDF

Gate Termination – The gates of these devices are essentially capacitors.

Figure 3 is presented as a guide for estimating device. Operating frequency datasjeet for a typical device. Operating Frequency Information Operating frequency information for a typical device Figure 3 is presented as a guide for estimating device performance for a specific application. Device turn-off delay can establish an additional frequency.

20N60A4 equivalent datasheet & applicatoin notes – Datasheet Archive

When devices are removed by hand from their carriers. All tail losses are included in the. Devices should never be inserted into or removed from circuits with power on.